2SK3705 no.7705-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. ? motor driver, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d * 60 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 208 a allowable power dissipation p d 2.0 w tc=25 c35w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche enargy (single pulse) *1 e as 540 mj avalanche current *2 i av 60 a *shows chip capability *1 v dd =20v, i av =60a, l=200 m h *2 l 200 m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =26a 28 40 s static drain-to-source on-state resistance r ds (on)1 i d =26a, v gs =10v 9.0 12.5 m w r ds (on)2 i d =26a, v gs =4v 12 17 m w continued on next page. ordering number : enn7705 13004qa ts im ta-100957 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 2SK3705 n-channl silicon mosfet general-purpose switching device applications
2SK3705 no.7705-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 5500 pf output capacitance coss v ds =20v, f=1mhz 750 pf reverse transfer capacitance crss v ds =20v, f=1mhz 550 pf turn-on delay time t d (on) see specified test circuit. 38 ns rise time t r see specified test circuit. 215 ns turn-off delay time t d (off) see specified test circuit. 380 ns fall time t f see specified test circuit. 280 ns total gate charge qg v ds =30v, v gs =10v, i d =52a 100 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =52a 18 nc gate-to-drain miller charge qgd v ds =30v, v gs =10v, i d =52a 16 nc diode forward voltage v sd i s =52a, v gs =0 1.0 1.2 v marking : k3705 package dimensions switching time test circuit unit : mm 2063a unclamped inductive test circuit pw=10 m s d.c. 1% p. g 50 w g s d i d =26a r l =1.15 w v dd =30v v out 2SK3705 v in 10v 0v v in 1 : gate 2 : drain 3 : source sanyo : to-220ml 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.55 2.55 2.4 4.5 2.8 0.7 2.55 2.55 2.4 1 23 i d -- v ds it06725 i d -- v gs it06726 0 4.5 0.5 0 0 100 90 80 70 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 60 50 40 30 20 10 0 100 90 80 70 1.0 1.5 2.0 2.5 3.0 3.5 4.0 60 50 40 30 20 10 10v 6v 8v 4v tc=25 c v gs =3v v ds =10v tc= --25 c --25 c 25 c 25 c 75 c tc=75 c drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 50 w 15v 0v 3 50 w rg dut v dd l
2SK3705 no.7705-3/4 r ds (on) -- v gs it06727 r ds (on) -- tc it06728 0 0 30 0 25 10 12345678 --50 --25 0 25 50 75 100 125 150 9 25 20 15 10 5 i d =26a tc= 75 c --25 c 25 c 20 15 10 5 i d = 2 6a, v gs =4v i d = 26 a, v gs =10v static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w case temperature, tc -- c 0 100 1000 10000 7 5 3 2 30 5 152025 10 ciss, coss, crss -- v ds it06732 a s o 2 2 3 5 5 10 7 2 3 5 7 2 3 5 7 3 100 1.0 0.1 23 57 23 57 23 57 0.1 1.0 10 100 it06734 sw time -- i d it06731 it06730 0 0.4 0.2 0.6 0.8 1.2 1.0 1.4 0.01 100 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 i f -- v sd v gs -- qg it06733 it06729 ? y fs ? -- i d 25 c --25 c 7 5 3 2 f=1mhz ciss coss crss tc=75 c 0.1 1.0 23 57 23 57 23 57 10 100 100 10 2 3 5 7 2 3 5 7 1.0 v ds =10v 25 c tc= --25 c 75 c v gs =0 010 0 1 2 3 4 5 6 7 8 100 80 90 70 10 9 20 30 40 50 60 v ds =30v i d =52a 100 10 3 2 5 7 1000 3 2 5 7 0.1 1.0 23 57 23 57 23 57 10 100 v dd =30v v gs =10v t d (off) t f tc=25 c single pulse <10 m s operation in this area is limited by r ds (on). 10 m s 100 m s 1ms 10ms 100ms i d =60a i dp =208a dc operation t r t d (on) drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward drain current, i f -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v
2SK3705 no.7705-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of january, 2004. specifications and information herein are subject to change without notice. ps 0 0 20 40 0.5 60 1.5 1.0 80 100 120 2.0 2.5 140 160 p d -- ta it06735 p d -- tc it06736 0 0 20 40 5 60 10 15 80 100 120 20 25 30 40 35 140 160 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w
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